Low-Resistive Ohmic Contacts in High-Electron-Mobility AlN/GaN Heterostructures by Suppressing the Oxygen Incorporation-Reference-Cited by-同舟云学术

Low-Resistive Ohmic Contacts in High-Electron-Mobility AlN/GaN Heterostructures by Suppressing the Oxygen Incorporation

Published:2022-07-12 Issue:7 Volume:4 Page:3632-3639
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Yang Liuyun¹^ORCID,Wang Jinlin¹,Sheng Shanshan¹,Zhang Baoqing¹,Sheng Bowen¹,Wang Tao²,Liu Fang¹,Tao Renchun¹,Xu Fujun¹^ORCID,Yang Xuelin¹^ORCID,Ge Weikun¹,Shen Bo¹,Wang Xinqiang¹³

Affiliation:

1. State Key Laboratory for Mesoscopic Physics and Frontiers, Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China

2. Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China

3. Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Beijing Outstanding Young Scientist Program

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00585