Affiliation:
1. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, People's Republic of China
2. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China
3. Guangdong Institute of Semiconductor Micro-nano Manufacturing Technology, Foshan 528000, People's Republic of China
Abstract
This Letter reports low-temperature (700 °C) growth of heavily Si-doped GaN (n++GaN) by metal-organic chemical vapor deposition with a resistivity as low as 1.9 × 10−4 Ω·cm and an atomically smooth surface. Indium adatoms added during the growth of n++GaN play an important role in improving both the surface morphology and free electron concentration. On the one hand, acting as surfactant, they greatly boost the adatoms surface mobility at low growth temperature and mitigate Si-induced anti-surfactant effect. On the other hand, they can effectively suppress the formation of compensating defects, thus contributing to an extremely high electron concentration of 2.8 × 1020 cm−3. This high-quality n++GaN was further applied to the realization of Ohmic contacts with an ultra-low contact resistance for AlGaN/GaN high electron mobility transistors. The carrier gas was carefully modulated for the selective area epitaxy (SAE) of n++GaN to facilitate the nucleation of GaN on the dielectric mask, which effectively suppressed the undesired mass transport and resulted in a uniform SAE of n++GaN in the recessed source/drain regions. A nearly defect-free interface between the n++GaN and two-dimensional electron gas channel has been also realized, and the resistance induced by the interface was only 0.03 Ω·mm. As a result, an ultra-low contact resistance of 0.07 Ω·mm has been realized. This work lays a solid foundation for further improving the performance of GaN-based RF and power devices.
Funder
National Key R&D Program of China
Guangdong Province Key-Area R&D Program
Natural Science Foundation of China
Jiangxi Double Thousand Plan
Jiangxi Science and Technology Program
Strategic Priority Research Program of CAS
Key Research Program of Frontier Sciences, CAS
Bureau of International Cooperation, CAS
Key R&D Program of Jiangsu Province
Suzhou Science and Technology Program
Subject
Physics and Astronomy (miscellaneous)
Cited by
3 articles.
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