Conduction Mechanisms at Interface of AlN/SiN Dielectric Stacks with AlGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior with Nanoscale Interfaces Properties-Reference-Cited by-同舟云学术

Conduction Mechanisms at Interface of AlN/SiN Dielectric Stacks with AlGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior with Nanoscale Interfaces Properties

Published:2017-09-26 Issue:40 Volume:9 Page:35383-35390
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Greco Giuseppe¹^ORCID,Fiorenza Patrick¹,Iucolano Ferdinando²,Severino Andrea²,Giannazzo Filippo¹^ORCID,Roccaforte Fabrizio¹^ORCID

Affiliation:

1. Consiglio Nazionale delle Ricerche−Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII, No. 5, Zona Industriale, 95121 Catania, Italy

2. STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy

Funder

Ministero dell?Istruzione, dell?Universit? e della Ricerca

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b08935

Reference52 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

3. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

4. Merits of gallium nitride based power conversion

5. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

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