Merits of gallium nitride based power conversion-Reference-Cited by-同舟云学术

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Merits of gallium nitride based power conversion

Published:2013-06-21 Issue:7 Volume:28 Page:074013
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Scott Mark J,Fu Lixing,Zhang Xuan,Li Jinzhu,Yao Chengcheng,Sievers Markus,Wang Jin

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/28/i=7/a=074013/pdf

Reference34 articles.

1. GaN power electronics for automotive application

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimal Driving Strategies for GaN HEMT: A Numerical Non-Linear Datasheet-Based Model;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

2. Challenges in atomic layer etching of gallium nitride using surface oxidation and ligand-exchange;Journal of Vacuum Science & Technology A;2023-03-01

3. Performance Improvement by Enhancing Passivation Layer of p-Type GaN High-Electron Mobility Transistors With Supercritical Oxygen Treatment;IEEE Electron Device Letters;2023-02

4. Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering;Materials Science in Semiconductor Processing;2023-02

5. The Improvement Breakdown Voltage of GaN on Si Pin Diode by Stepped Sidewall Treated with Fluorine Plasma;2022 IEEE 2nd International Conference on Computer Systems (ICCS);2022-09-23

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