Performance Improvement by Enhancing Passivation Layer of p-Type GaN High-Electron Mobility Transistors With Supercritical Oxygen Treatment-Reference-Cited by-同舟云学术

Performance Improvement by Enhancing Passivation Layer of p-Type GaN High-Electron Mobility Transistors With Supercritical Oxygen Treatment

Published:2023-02 Issue:2 Volume:44 Page:213-216
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chou Sheng-Yao¹,Wu Pei-Yu¹,Chen Ming-Chen²,Chang Ting-Chang²^ORCID,Tsai Xin-Ying³,Lin Shih-Kai⁴,Kuo Ting-Tzu⁵,Huang Wei-Chen²,Tu Hong-Yi¹,Wu Chung-Wei²,Tsai Tsung-Ming¹^ORCID,Huang Jen-Wei⁶

Affiliation:

1. Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan

2. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

3. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

4. Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan

5. Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan

6. Department of Physics, Republic of China Military Academy, Kaohsiung, Taiwan

Funder

National Science and Technology Council, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10027614/10000264.pdf?arnumber=10000264

Reference25 articles.

1. Comparative study on performance of AlGaN/GaN MS-HEMTs with SiNx, SiOx, and SiNO surface passivation

2. Effect of Inductively Couple Plasma-Based Oxygen Plasma Treatment on AlGaN/GaN HEMT

3. Performance and Reliability Optimization of Supercritical-Nitridation-Treated AlGaN/GaN High-Electron-Mobility Transistors

4. Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs

5. Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate