Effect of Inductively Couple Plasma-Based Oxygen Plasma Treatment on AlGaN/GaN HEMT-Reference-Cited by-同舟云学术

Effect of Inductively Couple Plasma-Based Oxygen Plasma Treatment on AlGaN/GaN HEMT

Published:2018-10-04 Issue:23 Volume:215 Page:1800481
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

He Yunlong¹,Wang Chong¹,Ma Peijun¹,Wang Zhan²,Zhang Meng²,Yang Ling²,Zheng Xuefeng¹,Guo Lixin³,Ma Xiaohua²,Hao Yue¹

Affiliation:

1. State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology; School of Microelectronics; Xidian University; Shaanxi 710071 People's Republic of China

2. School of Advanced Materials and Nanotechnology; Xidian University; Shaanxi 710071 People's Republic of China

3. School of Physics and Optoelectronic Engineering; Xidian University; Shaanxi 710071 People's Republic of China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201800481/fullpdf

Reference26 articles.

1. An AlN/Al0.85Ga0.15N high electron mobility transistor

2. A High-Voltage Low-Standby-Power Startup Circuit Using Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs

3. High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance

4. Improved Schottky barrier characteristics for AlInN/GaN diodes by oxygen plasma treatment

5. Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments

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1. Impact of oxygen plasma power on the performance of Ga2O3 passivated GaN ultraviolet photodetectors;Applied Surface Science;2024-11

2. Digital etching of AlGaN/GaN heterostructures with GaN cap using inductively coupled oxygen plasma process combined with wet chemical treatment;Materials Science in Semiconductor Processing;2024-10

3. Control of Surface Chemistry in Recess Etching toward Normally Off GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors;physica status solidi (RRL) – Rapid Research Letters;2024-04-29

4. Performance Improvement by Enhancing Passivation Layer of p-Type GaN High-Electron Mobility Transistors With Supercritical Oxygen Treatment;IEEE Electron Device Letters;2023-02