Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments-Reference-Cited by-同舟云学术

Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments

Published:2016-05-28 Issue:20 Volume:119 Page:205705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lükens G.^ORCID,Yacoub H.,Kalisch H.,Vescan A.^ORCID

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4952382

Reference24 articles.

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5. J. Joh , L. Xia , and J. A. del Alamo , in Electron Devices Meet. (2007), pp. 385–388.

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1. Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates;IEEE Journal of the Electron Devices Society;2023

2. Limitations for Reliable Operation at Elevated Temperatures of Al 2 O 3 /AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by Metal‐Organic Chemical Vapor Deposition on Silicon Substrate;physica status solidi (a);2019-11-20

3. Effect of Inductively Couple Plasma-Based Oxygen Plasma Treatment on AlGaN/GaN HEMT;physica status solidi (a);2018-10-04

4. Peculiarities of the current-voltage and capacitance-voltage characteristics of plasma etched GaN and their relevance to n-GaN Schottky photodetectors;Journal of Applied Physics;2018-09-14

5. Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs;IEEE Transactions on Electron Devices;2018-09