GaN power electronics for automotive application
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/6294016/6304622/06304646.pdf?arnumber=6304646
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of Abnormal C–V Hump on Si3N4 MIS-HEMT With Mesa Isolation Under Negative Gate Bias Stress;IEEE Transactions on Electron Devices;2024-04
2. The GaN Breakthrough for Sustainable and Cost-Effective Mobility Electrification and Digitalization;Electronics;2023-03-17
3. Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure;Functional Diamond;2023-03-02
4. Immunity of CAN, CAN FD and Automotive Ethernet 100/1000BASE-T1 to Crosstalk From Power Electronic Systems;IEEE Transactions on Electromagnetic Compatibility;2022-12
5. Plasma atomic layer etching of GaN/AlGaN materials and application: An overview;Journal of Semiconductors;2022-11-01
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