The GaN Breakthrough for Sustainable and Cost-Effective Mobility Electrification and Digitalization

Abstract

Vehicle electrification and digitalization are even more and more increasingly pushed by several aims, such as the improvement in sustainability, wellness, safety, and reliability. The need for onboard power electronics is a common factor for the different types of electric vehicles. Similarly, the increasing presence of onboard Internet of Things items as well as systems implementing artificial intelligence asks for additional power electronics that ensure supplying them according to their rating plate. Additionally, power converters have to perform this task also for traditional loads (infotainment; climate control, and so on) and new ones (USB and wireless chargers; Light detection and ranging, LiDAR applications, and so on). The transaction towards full electrification and digitalization requires highly efficient and compact power electronics converters. In this perspective, the Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are the best enabler device technology. This paper analyses the current and prospective improvement in sustainability and cost achievable with GaN in the automotive sector. Then, the advantages of the system in package GaN devices in power converter supporting this transaction, such as 48 V–12 V converters, onboard charges, and cell phone wireless chargers are experimentally investigated. The results have highlighted that, already in 2023, the use of Si devices in these applications does not enable further a lower overall converter cost with respect to GaN-based solutions. The reduction of passive costs enabled by using higher frequency thanks to the GaN features compensates for its higher cost. On the other hand, GaN HEMT enables high efficiency in all the aforesaid automotive applications as also experimentally proved in this paper, making it the best solution in terms of sustainability.