Current Collapse Phenomena Investigation in Automotive-Grade Power GaN Transistors

Author:

Basile Alfio1,Scrimizzi Filippo1,Rizzo Santi Agatino2ORCID

Affiliation:

1. STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy

2. Department of Electrical Electronic and Computer Engineering (DIEEI), University of Catania, 95125 Catania, Italy

Abstract

This work analyzes the impact of working conditions on the current collapse (CC) phenomenon for an automotive GaN device. For this purpose, some sensing circuits have been compared to find the most suitable for the considered GaN family. Simulations of the testing schematic have been performed, a prototype board has been created, and some measurements have been taken. Finally, the work has investigated the effect on the CC of the input voltage, current level, switching frequency, and duty cycle. The key outcome is that the temperature increment mitigates the CC phenomenon, which implies that the on-state resistance worsening (dynamic/static ratio), which is due to the CC, reduces with increasing temperature. Therefore, the typical increment of the dynamic on-resistance (RDSON) with increasing temperature is ascribable to the increment of the static one with temperature, while it is not at all an exacerbation of the current collapse phenomenon.

Funder

Ministry of Education, Universities and Research

Publisher

MDPI AG

Subject

Energy (miscellaneous),Energy Engineering and Power Technology,Renewable Energy, Sustainability and the Environment,Electrical and Electronic Engineering,Control and Optimization,Engineering (miscellaneous),Building and Construction

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3