Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure-Reference-Cited by-同舟云学术

Preparation of diamond on GaN using microwave plasma chemical vapor deposition with double-substrate structure

Published:2023-03-02 Issue:1 Volume:3 Page:
ISSN:2694-1112
Container-title:Functional Diamond
language:en
Short-container-title:Functional Diamond

Author:

Wang Yurui¹,Gao Deng¹,Zhang Tong¹,Zhang Hao¹,Zhang Yu¹,Fu Qiuming¹,Zhao Hongyang¹,Ma Zhibin¹

Affiliation:

1. Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Department of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, China

Publisher

Informa UK Limited

Subject

General Medicine

Link

https://www.tandfonline.com/doi/pdf/10.1080/26941112.2023.2183097

Reference36 articles.

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2. Kanamura M Ohki T Kikkawa T et al. Recent progress in GaN HEMT for high-frequency and high-power applications; Proceedings of the 2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) 2012. IEEE.

3. Ejeckam F Francis D Faili F et al. S2-T1: GaN-on-diamond: A brief history; Proceedings of the 2014 Lester Eastman Conference on High Performance Devices (LEC) 2014. IEEE.

4. Thermal simulation of joints with high thermal conductivities for power electronic devices

5. Application of GaN-based heterojunction FETs for advanced wireless communication

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