Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD
Author:
Affiliation:
1. George W. Woodruff School of Mechanical Engineering and Heat Lab, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
Funder
National Science Foundation
U.S. Department of Defense
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00131
Reference69 articles.
1. 40-W/mm Double Field-plated GaN HEMTs
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4. 150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon
5. 12 W/mm AlGaN–GaN HFETs on Silicon Substrates
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