Fabrication of low thermal resistance 3C-SiC/diamond structure for GaN epitaxial layer growth
Author:
Affiliation:
1. Department of Electronic Information Systems, Osaka City University, Osaka, Japan
2. Institute for Materials Research (IMR), Tohoku University, Oarai, Japan
3. Department of Physical and Electronics, Osaka Metropolitan University, Osaka, Japan
Funder
the New Energy and Industrial Technology Development Organization
Oarai Center and the Laboratory of Alpha-Ray Emitters in IMR
Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan
Publisher
Informa UK Limited
Link
https://www.tandfonline.com/doi/pdf/10.1080/26941112.2024.2337352
Reference46 articles.
1. 3-inch GaN-on-diamond HEMTs with device-first transfer technology;Liu T;IEEE Electron Device Lett,2017
2. Electroluminescence and capacitance-voltage characteristics of single-crystal n-type AlN (0001)/p-type diamond (111) heterojunction diodes;Hirama K;Appl Phys Lett,2011
3. Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs;Zhou Y;Appl Phys Lett,2017
4. Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond;Kuzmik J;J Appl Phys,2011
5. Thick, adherent diamond films on AlN with low thermal barrier resistance;Mandal S;ACS Appl Mater Interf,2019
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