Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3581032
Reference11 articles.
1. Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods
2. First principles calculation of the thermal conductance of GaN/Si and GaN/SiC interfaces as functions of the interface conditions
3. Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure
4. Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices
5. Thermal conductivity measurements on CVD diamond
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