AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources-Reference-Cited by-同舟云学术

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Published:2010-01-15 Issue:2 Volume:107 Page:024504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

El Fatimy A.,Dyakonova N.,Meziani Y.,Otsuji T.,Knap W.,Vandenbrouk S.,Madjour K.,Théron D.,Gaquiere C.,Poisson M. A.,Delage S.,Prystawko P.,Skierbiszewski C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3291101

Reference18 articles.

1. Far infrared emission from plasma oscillations of Si inversion layers

2. Thermal Excitation of Two-Dimensional Plasma Oscillations

3. Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors

4. Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

5. Room-temperature terahertz emission from nanometer field-effect transistors

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