Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1921339
Reference13 articles.
1. Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current
2. Plasma Wave Electronics for Terahertz Applications
3. Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
4. Plasma and transit-time mechanisms of the terahertz radiation detection in high-electron-mobility transistors
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