Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy-Reference-Cited by-同舟云学术

Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy

Published:2018-02-09 Issue:7 Volume:10 Page:6755-6763
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lytvyn Petro M.¹²³,Kuchuk Andrian V.²^ORCID,Mazur Yuriy I.²^ORCID,Li Chen²,Ware Morgan E.²^ORCID,Wang Zhiming M.¹,Kladko Vasyl P.³,Belyaev Alexander E.³,Salamo Gregory J.²

Affiliation:

1. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China

2. Institute for Nanoscience & Engineering, University of Arkansas, W. Dickson 731, Fayetteville, Arkansas 72701, United States

3. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, 03680 Kyiv, Ukraine

Funder

Ministry of Science and Technology of the People's Republic of China

Division of Engineering Education and Centers

National Natural Science Foundation of China

National Academy of Sciences of Ukraine

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b19160

Reference56 articles.

1. III-NITRIDE NANOSTRUCTURES FOR INTERSUBBAND OPTOELECTRONICS

2. Compositionally Graded III-Nitride Nanowire Heterostructures: Growth, Characterization, and Applications

3. Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

4. Polarization induced hole doping in graded AlxGa1−xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy

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