Polarization induced hole doping in graded AlxGa1−xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Polarization induced hole doping in graded AlxGa1−xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy

Published:2013-02-11 Issue:6 Volume:102 Page:062108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Shibin,Zhang Ting,Wu Jiang,Yang Yajie,Wang Zhiming,Wu Zhiming,Chen Zhi,Jiang Yadong

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4792685

Reference18 articles.

1. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

2. Evidence for Two Mg Related Acceptors in GaN

3. Role of nitrogen vacancies in the luminescence of Mg-doped GaN

4. Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices

5. Theoretical study of polarization-doped GaN-based light-emitting diodes

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1. Thickness and Mg doping of graded AlGaN layers: Influence on contact layer's structural and electrical properties for DUV emitters;Materials Science in Semiconductor Processing;2024-08

2. Hole Generation in Polarization‐Doped Al_xGa_1–xN (x = 0.9–0.35)‐Graded Layer with Heavily Mg‐Doped Al_0.35Ga_0.65N Contact Layer for 275 nm Deep‐Ultraviolet Light‐Emitting Diode;physica status solidi (a);2024-06-05

3. Dislocation density as a factor compensating the polarization doping effect in graded p-AlGaN contact layers;Journal of Alloys and Compounds;2024-05

4. Dynamical Behavior of a Stacked Blue Laser Diode Consisting of Two Active Regions with Wide InGaN Quantum Wells and Two Tunnel Junctions;physica status solidi (a);2024-03-19

5. Polarization-doped n-p-i-p-n GaN-based parallel phototransistor with thick GaN absorption layer for achieving high responsivity;Semiconductor Science and Technology;2024-02-08

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