Tunneling and Thermionic Emission as Charge Transport Mechanisms in a W-Based Schottky Contacts on Algan/Gan Heterostructures

Author:

Milazzo Simone,Greco Giuseppe,Di Franco Salvatore,Fiorenza Patrick,Giannazzo Filippo,Bongiorno Corrado,Gervasi Leonardo,Mirabella Salvo,Iucolano Ferdinando,Roccaforte Fabrizio

Publisher

Elsevier BV

Reference32 articles.

1. Physics and technology of gallium nitride materials for power electronics;F Roccaforte;La Rivista Del Nuovo Cimento,2018

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3. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures;O Ambacher;Journal of Applied Physics,2000

4. Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures;G Greco;Journal of Applied Physics,2021

5. Mechanism of anomalous current transport in n -type GaN Schottky contacts;H Hasegawa;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,2002

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