Effect of the growth temperature on the formation of deep-level defects and optical properties of epitaxial BGaN
Author:
Funder
The Łukasiewicz Centre
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
https://link.springer.com/content/pdf/10.1007/s10853-022-07725-4.pdf
Reference58 articles.
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2. Williams L, Kioupakis E (2017) BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs. Appl Phys Lett 111:211107. https://doi.org/10.1063/1.4997601
3. Park SH, Hong WP, Kim JJ et al (2017) High-efficiency BGaN/AlN quantum wells for optoelectronic applications in ultraviolet spectral region. Int Conf Numer Simul Optoelectron Devices (NUSOD). https://doi.org/10.1109/nusod.2017.8009999
4. Said A, Debbichi M, Said M (2016) Theoretical study of electronic and optical properties of BN, GaN and BxGa1−xN in zinc blende and wurtzite structures. Optik 127:9212–9221. https://doi.org/10.1016/j.ijleo.2016.06.103
5. Salvestrini JP, Ahaitouf A, Srour H et al (2012) Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices In. Quantum Sens Nanophotonic Devices IX 8268:82682S. https://doi.org/10.1117/12.914800
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