Investigation of BGaN Layer in Photodetector Structure-Reference-Cited by-同舟云学术

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Investigation of BGaN Layer in Photodetector Structure

Published:2024-08-18 Issue: Volume: Page:1-9
ISSN:0377-2063
Container-title:IETE Journal of Research
language:en
Short-container-title:IETE Journal of Research

Author:

Allam Zehor¹²,Bouchachia Badia³,Boudaoud Chahrazad³,Hafaifa Loumafak¹²

Affiliation:

1. University of Djelfa, FECS, Ziane Achour University, 17000 Djelfa, Algeria

2. Physico-Chemistry of Materials and Environment Laboratory, Ziane Achour University of Djelfa, Djelfa, Algeria

3. Department of Physics in the Faculty of Science, University of Tlemcen, Tlemcen, Algeria

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/03772063.2024.2390091

Reference32 articles.

1. Boron influence on bandgap and photoluminescence in BGaN grown on AlN

2. Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices

3. Photoluminescence efficiency of BGaN epitaxial layers with high boron content

4. Band-Gap Energy and Effective Mass of BGaN

5. Theoretical study of electronic and optical properties of BN, GaN and BxGa1−xN in zinc blende and wurtzite structures

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