Boron influence on bandgap and photoluminescence in BGaN grown on AlN-Reference-Cited by-同舟云学术

Boron influence on bandgap and photoluminescence in BGaN grown on AlN

Published:2020-04-30 Issue:16 Volume:127 Page:165703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zdanowicz E.¹²^ORCID,Iida D.³^ORCID,Pawlaczyk L.⁴^ORCID,Serafinczuk J.²⁴^ORCID,Szukiewicz R.²⁵^ORCID,Kudrawiec R.¹²^ORCID,Hommel D.²⁵^ORCID,Ohkawa K.³^ORCID

Affiliation:

1. Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland

2. ŁUKASIEWICZ Research Network—PORT Polish Center for Technology Development, Stabłowicka 147, 54-066 Wrocław, Poland

3. Computer, Electrical and Mathematical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia

4. Department of Nanometrology, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

5. Institute of Experimental Physics, University of Wrocław, Maxa Borna 9, 50-204 Wrocław, Poland

Funder

King Abdullah University of Science and Technology

National Science Centre

Foundation for Polish Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5140413

Reference35 articles.

1. DC and RF characteristics optimization of AlGaN/GaN/BGaN/GaN/Si HEMT for microwave-power and high temperature application

2. Influence of a BGaN back-barrier on DC and dynamic performances of an AlGaN/GaN HEMT: simulation study

3. Enhancement of electrons confinement in AlGaN/AlN/GaN heterostructure using BGaN buffer with a small B-content

4. Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

5. Refractive indices of B x Al 1− x N ( x = 0–0.012) and B y Ga 1− y N ( y = 0–0.023) epitaxial layers in ultraviolet region

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