Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors-Reference-Cited by-同舟云学术

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Published:2012-06-11 Issue:24 Volume:100 Page:243503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ravindran Vinod,Boucherit Mohamed,Soltani Ali,Gautier Simon,Moudakir Tarik,Dickerson Jeramy,Voss Paul L.,di Forte-Poisson Marie-Antoinette,De Jaeger Jean-Claude,Ougazzaden Abdallah

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4729154

Reference23 articles.

1. Pressure Induced Deep Gap State of Oxygen in GaN

2. Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

3. Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy

4. AlGaN∕GaN∕AlN quantum-well field-effect transistors with highly resistive AlN epilayers

5. AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

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