The lattice-matched AlInN/GaN high electron mobility transistor with BGaN buffer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference27 articles.
1. 70-nm-gated InAlN/GaN HEMTs grown on SiC substrate withfT/fmax> 160 GHz
2. InAlN/GaN HEMTs on Si With High ${{f}}_{\text {T}}$ of 250 GHz
3. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz
4. High‐frequency InAlN/GaN HFET with f max over 400 GHz
5. High performance InAlN/GaN high electron mobility transistors for low voltage applications*
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1. Theoretical study of electron mobility in AlGaN back-barrier Al2O3/InAlN/GaN heterostructures under optical phonon scattering;Journal of Applied Physics;2024-05-01
2. Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications;Engineering Research Express;2024-04-24
3. Effects of physical parameters of graded AlGaN buffer on DC characteristic and short-channel effects in AlInN/GaN high-electron mobility transistors;Microelectronics Journal;2023-09
4. Investigation of DC and RF Characteristics of Recessed Gate III-Nitride nano-HEMT on β-Ga2O3 Substrate with Back-Barrier for High-Power and High-Frequency Applications;2023-07-11
5. A novel p-GaN HEMT with AlInN/AlN/GaN double heterostructure and InAlGaN back-barrier;Microelectronics Reliability;2023-06
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