The lattice-matched AlInN/GaN high electron mobility transistor with BGaN buffer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference27 articles.
1. 70-nm-gated InAlN/GaN HEMTs grown on SiC substrate withfT/fmax> 160 GHz
2. InAlN/GaN HEMTs on Si With High ${{f}}_{\text {T}}$ of 250 GHz
3. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz
4. High‐frequency InAlN/GaN HFET with f max over 400 GHz
5. High performance InAlN/GaN high electron mobility transistors for low voltage applications*
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effects of physical parameters of graded AlGaN buffer on DC characteristic and short-channel effects in AlInN/GaN high-electron mobility transistors;Microelectronics Journal;2023-09
2. Investigation of DC and RF Characteristics of Recessed Gate III-Nitride nano-HEMT on β-Ga2O3 Substrate with Back-Barrier for High-Power and High-Frequency Applications;2023-07-11
3. A novel p-GaN HEMT with AlInN/AlN/GaN double heterostructure and InAlGaN back-barrier;Microelectronics Reliability;2023-06
4. Analysis of InGaN Back-Barrier on Linearity and RF Performance in a Graded-Channel HEMT;Journal of Electronic Materials;2022-12-08
5. Improvement of DC and f T performances of graded-channel HEMTs by polarization engineering;Semiconductor Science and Technology;2022-08-19
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3