High‐frequency InAlN/GaN HFET with f max over 400 GHz-Reference-Cited by-同舟云学术

High‐frequency InAlN/GaN HFET with f max over 400 GHz

Published:2018-06 Issue:12 Volume:54 Page:783-785
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Fu Xing‐Chang¹²,Lv Yuanjie³,Zhang Li‐Jiang¹²,Zhang Tong¹,Li Xian‐Jie¹,Song Xubo²,Zhang Zhirong²,Fang Yulong³,Feng Zhihong³

Affiliation:

1. Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast UniversityNanjing210096People's Republic of China

2. Hebei Semiconductor Research Institute, Shijiazhuang, 050051People's Republic of China

3. National Key Laboratory of Application Specific Integrated Circuit (ASIC)Shijiazhuang050051People's Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2018.0247

Reference7 articles.

1. AlGaN/GaN HEMT With 300-GHz $f_{\max}$

2. W‐band MMIC PA with ultrahigh power density in 100‐nm AlGaN/GaN technology;Wu S.B.;Trans. Electron Devices,2016

3. Scaling of GaN HEMTs and Schottky diodes for submillimeter‐wave MMIC applications;Shinohara K.;Trans. Electron Devices,2013

4. 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment

5. Reliability Assessment of InAlN/GaN HFETs With Lifetime $8.9\times 10^{\mathrm {6}}$ h

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