Investigation of DC and RF Characteristics of Recessed Gate III-Nitride nano-HEMT on β-Ga2O3 Substrate with Back-Barrier for High-Power and High-Frequency Applications

Abstract

Abstract In this research study, a recessed gate III-Nitride based nano high electron mobility transistor (HEMT) grown on a lattice matched β-Ga2O3 substrate is designed. This research investigation aims to enhance DC and RF performance of AlGaN/GaN HEMT, and minimize the short-channel effects by incorporating an AlGaN back layer and field plate technique, which can enhances electron confinement in two-dimensional electron gas (2DEG). A precise comparison analysis is done on the proposed HEMT’s input characteristics, output characteristics, leakage current characteristics, breakdown voltage properties, and RF behaviour in presence and absence of AlGaN back layer in regards to field plate configuration. The inclusion of back barrier aids in raising the level of conduction band, which reduces leakage loss beneath the buffer, and aids in keeping the 2DEG to be confined to narrow channel. Furthermore, the field plate design offers an essential electric field drift between gate and drain, resulting to enhanced breakdown voltage characteristics. The proposed recessed gate HEMT with intended Al0.1Ga0.9N layer between GaN buffer and β-Ga2O3 substrate along with field-pated arrangement exhibited a superior performance attributes.