Insights on boron impact on structural characteristics in epitaxially grown BGaN-Reference-Cited by-同舟云学术

Insights on boron impact on structural characteristics in epitaxially grown BGaN

Published:2022-03-25 Issue:14 Volume:57 Page:7265-7275
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Możdżyńska Ewelina B.^ORCID,Złotnik Sebastian,Ciepielewski Paweł,Gaca Jarosław,Wójcik Marek,Michałowski Paweł P.,Rosiński Krzysztof,Piętak Karolina,Rudziński Mariusz,Jezierska Elżbieta,Baranowski Jacek M.

Funder

The Łukasiewicz Centre

IDUB project

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s10853-022-07085-z.pdf

Reference46 articles.

1. Nakamura S, Pearton S, Fasol G (2000) The blue laser diode. Springer, Berlin

2. Ougazzaden A, Gautier S, Moudakir T et al (2008) Bandgap bowing in BGaN thin films. Appl Phys Lett 93:083118. https://doi.org/10.1063/1.2977588

3. Park SH, Ahn D (2017) Dip-shaped AlGaN/AlN light-emitting diodes with delta-layer containing boron. IEEE Photonics Technol Lett 29:1042–1045. https://doi.org/10.1109/LPT.2017.2702610

4. Lymperakis L (2018) Ab-initio study of boron incorporation and compositional limits at GaN and AlN (0001) surfaces. AIP Adv 8:65301. https://doi.org/10.1063/1.5029339

5. Shen J-X, Turiansky ME, Wickramaratne D, Van de Walle CG (2021) Thermodynamics of boron incorporation in BGaN. Phys Rev Mater 5:L030401. https://doi.org/10.1103/physrevmaterials.5.l030401

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2. Electron paramagnetic resonance of VN–VGa complex in BGaN;APL Materials;2023-10-01

3. Effect of the growth temperature on the formation of deep-level defects and optical properties of epitaxial BGaN;Journal of Materials Science;2022-09

4. Demonstration of MOCVD-grown BGaN with over 10% boron composition;AIP Advances;2022-08-01