Bandgap bowing in BGaN thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2977588
Reference16 articles.
1. (BAlGa)N quaternary system and epitaxial growth on (0001)6H-SiC substrate by low-pressure MO-VPE
2. Band-Gap Energy and Effective Mass of BGaN
3. Electronic energy structure and X-ray spectra of GaN and BxGa1-x N crystals
4. GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3
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