Thermodynamics of boron incorporation in BGaN-Reference-Cited by-同舟云学术

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Thermodynamics of boron incorporation in BGaN

Published:2021-03-09 Issue:3 Volume:5 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Shen Jimmy-Xuan^ORCID,Turiansky Mark E.^ORCID,Wickramaratne Darshana^ORCID,Van de Walle Chris G.^ORCID

Funder

National Science Foundation

U.S. Department of Energy

Office of Science

Basic Energy Sciences

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.5.L030401/fulltext

Reference31 articles.

1. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

2. High-power blue laser diodes with indium tin oxide cladding on semipolar (202¯1¯) GaN substrates

3. AlGaN/GaN HEMTs-an overview of device operation and applications

4. Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

5. Band alignments and polarization properties of BN polymorphs

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Change in Growth Mode of BGaN Layers Grown on GaN;Crystals;2024-06-11

2. Perspective: Theory and simulation of highly mismatched semiconductor alloys using the tight-binding method;Journal of Applied Physics;2024-03-13

3. Electron paramagnetic resonance of VN–VGa complex in BGaN;APL Materials;2023-10-01

4. Electronic and optical properties of boron-containing GaN alloys: The role of boron atom clustering;APL Materials;2023-09-01

5. An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions;Applied Physics Letters;2023-07-03

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