Ab-initio study of boron incorporation and compositional limits at GaN and AlN (0001) surfaces
Author:
Affiliation:
1. Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Straße 1, 40237 Düsseldorf, Germany
Funder
Horizon 2020 Framework Programme
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5029339
Reference42 articles.
1. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2. The Blue Laser Diode
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5. Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications
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