DC and RF characteristics optimization of AlGaN/GaN/BGaN/GaN/Si HEMT for microwave-power and high temperature application

Author:

GASSOUMI Moujahed,HELALI Abdelhamid,MAAREF Hassen,GASSOUMI Malek

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference27 articles.

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5. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

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