Theoretical study of electronic and optical properties of BN, GaN and BxGa1−xN in zinc blende and wurtzite structures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference55 articles.
1. High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays
2. Structural, Elastic Constant, and Vibrational Properties of Wurtzite Gallium Nitride: A First-Principles Approach
3. High-temperature annealing of bulk GaN layers
4. First-Principle Electronic, Elastic, and Optical Study of Cubic Gallium Nitride
5. Phonons in Bx Ga1–xN/GaN epilayers studied by means of UV Raman scattering
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