High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays
Author:
Affiliation:
1. Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Department of Physics, Chungbuk National University, Cheongju 361-763, Department of Electronic Engineering, Kyunghee University, Yongin 449-701, Korea
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl049615a
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1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
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3. The Blue Laser Diode
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