BInGaN alloys nearly lattice-matched to GaN for high-power high-efficiency visible LEDs
Author:
Affiliation:
1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
Funder
National Science Foundation
U.S. Department of Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4997601
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1. The efficiency challenge of nitride light-emitting diodes for lighting
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4. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
5. Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes
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