Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation-Reference-Cited by-同舟云学术

Dislocation reduction in GaN grown by hydride vapor phase epitaxy via growth interruption modulation

Published:2001-02-05 Issue:6 Volume:78 Page:772-774
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Wei,Roesel Stephan,Alves Helder R.,Meister Dirk,Kriegseis Wilhelm,Hofmann Detlev M.,Meyer Bruno K.,Riemann Till,Veit Peter,Blaesing Juergen,Krost Alois,Christen Juergen

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1344224

Reference10 articles.

1. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

2. Growth of gallium nitride by hydride vapor-phase epitaxy

3. Anisotropic epitaxial lateral growth in GaN selective area epitaxy

4. Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation

5. Dislocation reduction in GaN thin films via lateral overgrowth from trenches

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