Accumulation of Background Impurities in Hydride Vapor Phase Epitaxy Grown GaN Layers-Reference-Cited by-同舟云学术

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Accumulation of Background Impurities in Hydride Vapor Phase Epitaxy Grown GaN Layers

Published:2013-08-01 Issue:8S Volume:52 Page:08JB22
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Usikov Alexander,Soukhoveev Vitali,Kovalenkov Oleg,Syrkin Alexander,Shapovalov Liza,Volkova Anna,Ivantsov Vladimir

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference25 articles.

1. GaN single crystals grown on HVPE seeds in alkaline supercritical ammonia

2. Ammonothermal growth of high-quality GaN crystals on HVPE template seeds

3. Semi-polar nitride surfaces and heterostructures

4. InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy

5. Nitrides optoelectronic devices grown by molecular beam epitaxy

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1. Study of stress/strain and structural defects at Cu/GaN interface;Vacuum;2023-07

2. Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN;Applied Physics Letters;2022-01-03

3. Point Defects in GaN;Semiconductors and Semimetals;2022

4. Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry;Scientific Reports;2020-02-10

5. Time-resolved photoluminescence and photoreflectance spectroscopy of GaN layers grown on SiN-treated sapphire substrate: Optical properties evolution at different growth stages;Optical Materials;2017-11

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