InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%
4. InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
5. The Blue Laser Diode;Nakamura,1997
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2. A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy;Journal of Crystal Growth;2013-02
3. Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-07
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5. Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2010-09-21
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