Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy-Reference-Cited by-同舟云学术

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Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

Published:2012-07 Issue:4 Volume:30 Page:041513
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Browne David A.,Young Erin C.,Lang Jordan R.,Hurni Christophe A.,Speck James S.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4727967

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2. The effect of ammonia partial pressure on the growth of semipolar (11–22) InGaN/GaN MQWs and LED structures;Materials Science and Engineering: B;2023-05

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4. Parasitic behavior of different V/III ratios on the properties of InGaN/GaN heterostructures by MOCVD technique;Journal of Alloys and Compounds;2023-03

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