Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy

Published:2010-09-21 Issue:9 Volume:49 Page:091001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Kuei-Ming,Yeh Yen-Hsien,Wu Yin-Hao,Chiang Chen-Hao,Yang Din-Ru,Gao Zhong-Shan,Chao Chu-Li,Chi Tung-Wei,Fang Yen-Hsang,Tsay Jenq-Dar,Lee Wei-I

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference28 articles.

1. High-power and reliable operation of vertical light-emitting diodes on bulk GaN

2. InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy

3. GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates

4. High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate

5. Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of lateral growth of self-assembled GaN microdisks on UV lasing action;Nano Research;2023-07-18

2. Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications;AIP Advances;2022-02-01

3. The control of mechanical bow for GaN substrate grown by HVPE with relatively longer radius of lattice curvature;physica status solidi (c);2014-02

4. Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substrates;Journal of Crystal Growth;2012-07

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