Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications-Reference-Cited by-同舟云学术

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Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications

Published:2022-02-01 Issue:2 Volume:12 Page:025126
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Eric N’Dohi Atse Julien¹^ORCID,Sonneville Camille¹^ORCID,Phung Luong Viet¹,Ngo Thi Huong²,De Mierry Philippe²,Frayssinet Eric²,Maher Hassan³^ORCID,Tasselli Josiane⁴,Isoird Karine⁴,Morancho Frédéric⁴,Cordier Yvon²^ORCID,Planson Dominique¹

Affiliation:

1. Univ. Lyon, INSA Lyon, Univ. Claude Bernard Lyon 1, Ecole Centrale Lyon, CNRS, Ampère, Villeurbanne Cedex F-69621, France

2. Université Côte d’Azur, CNRS, CRHEA, Valbonne 06560, France

3. Université de Sherbrooke, CNRS-UMI_LN2, Sherbrooke, Quebec J1K 2R1, Canada

4. LAAS-CNRS, Université de Toulouse, CNRS, UPS, Toulouse, France

Funder

French Technology Facility Network RENATECH

Agence Nationale de la Recherche

LabEx GANEX

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0082860

Reference27 articles.

1. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

2. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

3. Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors

4. GaN Substrates for III-Nitride Devices

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Micro-Raman analysis of HVPE grown etched GaN epilayer with porous formation;Semiconductor Science and Technology;2023-05-25

2. Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy;physica status solidi (a);2023-05-10

3. Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode;Crystals;2023-04-22

4. Influence of fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode;Microelectronic Engineering;2023-04

5. Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes;Micro and Nanostructures;2022-12

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