Influence of fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode-Reference-Cited by-同舟云学术

Influence of fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode

Published:2023-04 Issue: Volume:274 Page:111975
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Maurya Vishwajeet,Buckley Julien,Alquier Daniel,Haas Helge,Irekti Mohamed-Reda,Kaltsounis Thomas,Charles Matthew,Rochat Névine,Sonneville Camille,Sousa Veronique

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference21 articles.

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2. Vertical GaN junction barrier Schottky diodes with near-ideal performance using mg implantation activated by ultra-high-pressure annealing;Khachariya;Appl. Phys. Express,2022

3. Vertical GaN Schottky barrier diode using nitrogen ion implantation to form a donut-shaped channel;Chen;J. Electron. Mater.,2021

4. Finite-zone argon implant edge termination for high-voltage Gan schottky rectifiers;Ozbek;IEEE Electron Device Lett.,2011

5. DLTS analysis of high resistive edge termination technique-induced defects in GaN-based Schottky barrier diodes;Koné;Phys. Status Solidi Appl. Mater. Sci.,2016

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1. Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices;Micromachines;2024-05-29

2. Exploring the impact of AlGaN barrier thickness and temperature on normally-on GaN HEMT performance;Engineering Research Express;2024-04-16

3. Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates;Microelectronic Engineering;2023-05