DLTS analysis of high resistive edge termination technique-induced defects in GaN-based Schottky barrier diodes-Reference-Cited by-同舟云学术

DLTS analysis of high resistive edge termination technique-induced defects in GaN-based Schottky barrier diodes

Published:2016-03-31 Issue:9 Volume:213 Page:2364-2370
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Koné Sodjan¹,Cayrel Frederic¹,Yvon Arnaud²,Collard Emmanuel²,Alquier Daniel¹

Affiliation:

1. Laboratoire GREMAN; Université de Tours; 16 rue Pierre et Marie Curie 37100 Tours France

2. STMicroelectronics; 10, rue Thalès de Milet CS 97155 37071 Tours cedex 2 France

Funder

OSEO

Bpi France

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. J. W. Milligan S. Sheppard W. Pribble A. Ward S. Wood 2008

3. Recent Progresses in GaN Power Rectifier

4. Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimisation of Negative Fixed Charge Based Edge Termination for Vertical GaN Schottky Devices;Micromachines;2024-05-29

2. Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation;Energies;2023-07-18

3. Influence of fluorine implantation on the physical and electrical characteristics of GaN-on-GaN vertical Schottky diode;Microelectronic Engineering;2023-04

4. A new lateral AlGaN/GaN Schottky barrier diode combining with floating metal rings and P-guard rings for high breakdown voltage;2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-02-07

5. High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure;Chinese Physics B;2023-01-01