Recent Progresses in GaN Power Rectifier-Reference-Cited by-同舟云学术

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Recent Progresses in GaN Power Rectifier

Published:2012-01-01 Issue:1S Volume:51 Page:01AG08
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Alquier Daniel,Cayrel Frederic,Menard Olivier,Bazin Anne-Elisabeth,Yvon Arnaud,Collard Emmanuel

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference53 articles.

1. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

2. GaN FETs for microwave and high-temperature applications

3. General principles of growing large-size single crystals of various silicon carbide polytypes

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sensor applications based on AlGaN/GaN heterostructures;Materials Science and Engineering: B;2021-01

2. Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN;physica status solidi (a);2017-12-19

3. DLTS analysis of high resistive edge termination technique-induced defects in GaN-based Schottky barrier diodes;physica status solidi (a);2016-03-31

4. Review of using gallium nitride for ionizing radiation detection;Applied Physics Reviews;2015-09

5. Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride;Thin Solid Films;2014-11

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