Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride-Reference-Cited by-同舟云学术

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Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride

Published:2014-11 Issue: Volume:571 Page:567-572
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Fodor B.,Cayrel F.,Agocs E.,Alquier D.,Fried M.,Petrik P.

Funder

National Development Agency

OTKA

Hungarian–French Intergovernmental S&T Cooperation Programme

CampusFrance

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Diffusion and Activation of Ultra Shallow Boron Implants in Silicon in Proximity of Voids

2. Effect of voids-controlled vacancy supersaturations on B diffusion

3. Boron diffusion in presence of defects induced by helium implantation

4. A simple model for boron trapping by He implantation extended defects in Si: the role of boron diffusivity

5. Gettering on Cavities Induced by Helium Implantation in Si: The Case of Boron

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Methods for optical modeling and cross-checking in ellipsometry and scatterometry;SPIE Proceedings;2015-06-21

2. Optical characterization of macro-, micro- and nanostructures using polarized light;Journal of Physics: Conference Series;2014-12-03

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