Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

Published:2015-05-04 Issue:18 Volume:106 Page:183502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yeluri Ramya¹^ORCID,Lu Jing¹,Hurni Christophe A.²^ORCID,Browne David A.²,Chowdhury Srabanti³,Keller Stacia¹,Speck James S.²,Mishra Umesh K.¹

Affiliation:

1. Electrical and Computer Engineering Department, University of California Santa Barbara, Santa Barbara, California 93106, USA

2. Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA

3. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

Funder

Solid State Lighting and Energy Center, University of California Santa Barbara

Toyota Motor Corporation (Toyota)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4919866

Reference33 articles.

1. Total GaN solution to electrical power conversion

2. 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

3. Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs

4. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

5. Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs

Cited by 82 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN Vertical MOSFETs With Monolithically Integrated Freewheeling Merged pn-Schottky Diodes (MPS-MOS) for 1.2-kV Applications;IEEE Transactions on Electron Devices;2024-08

2. Enhanced hole transport of nonpolar InGaN-based light-emitting diodes with lateral p-type superlattice doping structure;Fundamental Research;2024-04

3. Demonstration of Trench Isolated Monolithic GaN μLED Displays Enabled by Photoresist Planarization;IEEE Photonics Journal;2023-08

4. Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode;Crystals;2023-04-22

5. High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion;Crystals;2023-04-21

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3