Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
2. GaN Growth Using GaN Buffer Layer
3. Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation
4. Dislocation reduction in GaN crystal by advanced-DEEP
5. Stress and Defect Distribution of Thick GaN Film Homoepitaxially Regrown on Free-Standing GaN by Hydride Vapor Phase Epitaxy
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1. Fabrication of free-standing GaN substrates using electrochemically formed porous separation layers;Applied Physics Express;2024-05-01
2. Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates;Journal of Applied Physics;2024-04-10
3. Suppression of newly generated threading dislocations at the regrowth interface of a GaN crystal by growth rate control in the Na-flux method;Japanese Journal of Applied Physics;2022-04-25
4. Substrate off-angle dependency of Al content in Al x Ga1−x N/GaN high-electron-mobility transistor structures on free-standing GaN substrates;Japanese Journal of Applied Physics;2021-06-22
5. Anomalous dislocation annihilation behavior observed in a GaN crystal grown on point seeds by the Na-flux method;Applied Physics Express;2020-07-22
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