Author:
Imanishi Masayuki,Okumura Kanako,Nakamura Kousuke,Kitamura Tomoko,Kakinouchi Keisuke,Murakami Kosuke,Yoshimura Masashi,Fujita Yu,Tsusaka Yoshiyuki,Matsui Junji,Mori Yusuke
Abstract
Abstract
We recently invented a method called the flux-film-coated technique for purifying a GaN wafer with low dislocation density grown from point-seed crystals. In this study, we investigated the mechanism behind the reduction of dislocation density in the GaN wafer by evaluating the three-dimensional behavior of dislocations using multiphoton-excitation photoluminescence images. We made the surprising discovery that dislocations more than 50 μm away disappeared by annihilating each other as growth proceeded, and this is one of the mechanisms underlying the dislocation density reduction. The moving distance of dislocations before annihilation is uncommon and a unique phenomenon in the Na-flux method.
Funder
Advanced Low Carbon Technology Research and Development Program
Ministry of Environment
Subject
General Physics and Astronomy,General Engineering
Cited by
11 articles.
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