High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates-Reference-Cited by-同舟云学术

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High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

Published:2000-07-01 Issue:Part 2, No. 7A Volume:39 Page:L647-L650
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nagahama Shin-ichi,Iwasa Naruhito,Senoh Masayuki,Matsushita Toshio,Sugimoto Yasunobu,Kiyoku Hiroyuki,Kozaki Tokuya,Sano Masahiko,Matsumura Hiroaki,Umemoto Hitoshi,Chocho Kazuyuki,Mukai Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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