5.0 kV breakdown-voltage vertical GaN p–n junction diodes-Reference-Cited by-同舟云学术

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5.0 kV breakdown-voltage vertical GaN p–n junction diodes

Published:2018-02-23 Issue:4S Volume:57 Page:04FG09
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ohta Hiroshi,Hayashi Kentaro,Horikiri Fumimasa,Yoshino Michitaka,Nakamura Tohru,Mishima Tomoyoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=4S/a=04FG09/pdf

Reference29 articles.

1. Planar Nearly Ideal Edge-Termination Technique for GaN Devices

2. Thermal and electrical properties of high-quality freestanding GaN wafers with high carrier concentration

3. Thermal conductivity of bulk GaN—Effects of oxygen, magnesium doping, and strain field compensation

4. Accurate dependence of gallium nitride thermal conductivity on dislocation density

5. High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

Cited by 97 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on the Impact of Mg-Channeled Implantation on Junction Termination Extension for GaN Vertical Power Devices Using TCAD Simulation;IEEE Transactions on Electron Devices;2024-09

2. Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability;IEEE Electron Device Letters;2024-05

3. Fabrication of free-standing GaN substrates using electrochemically formed porous separation layers;Applied Physics Express;2024-05-01

4. Post-trench restoration for vertical GaN power devices;Applied Physics Letters;2024-02-26

5. Modeling Framework to Compare High Voltage Vertical GaN PN and Merged PN-Schottky Diodes;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

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