High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process-Reference-Cited by-同舟云学术

High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process

Published:2013-02-01 Issue:2R Volume:52 Page:028007
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hatakeyama Yoshitomo,Nomoto Kazuki,Terano Akihisa,Kaneda Naoki,Tsuchiya Tadayoshi,Mishima Tomoyoshi,Nakamura Tohru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. High-breakdown-voltage pn-junction diodes on GaN substrates

2. Effect of low-temperature-grown GaN cap layer on reduced leakage current of GaN Schottky diodes

3. Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

4. Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

5. Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

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